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Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field

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Academic year: 2021

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FIG. 1. Switching distribution for a 70 × 100 nm 2 pMTJ with a compensated SAF for an applied field µ 0 H = − 30 mT
TABLE I. Stack parameters used for the FASTMAG simulations, the anisotropy constant K, the saturated magnetization M S , the exchange coupling, and the damping.
FIG. 3. (I) Micromagnetic simulations of the reference layers’

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