Helical quantum Hall phase in graphene on SrTiO 3

The temperature independent, coarse domain structure in the bulk of the crystal is in strong contrast with a fine domain structure and strain relaxations near the crystal surface..

2DEL critical temperature (squares) and thickness (crossed squares; right scale) measured at the LAO/STO interface as a function of the sheet carrier density.. Solid lines show

We discuss the formation of the 2-dimensional electron liquid at this interface, the particular electronic structure linked to the carrier confinement, the transport properties, and

In summary, with IR ellipsometry and transport mea- surements we determined the sheet carrier concentration of N s 5–9 10 13 cm 2 of the electrons at the LAO-STO interface and

As the nature of the metallic ground state at quantum criticality is concerned, the limiting T 2 dependence of the sheet conductivity points to Fermi-liquid behavior, consistent

In these samples we observe quantum oscillations in the electrical resistance as a function of magnetic field whose frequency depends only on the per- pendicular component of

Two-Dimensional Two-Dimensional Electron Gas Magnetoresistance Hall Effect MagnetoConductance Density Of States Fermi Surface Landau Level Pulsed Laser Deposition Reflection

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