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Modélisation des propriétés structurales, électroniques et optiques des nanofils de nitrures GaN/AlN

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Figure 1.2: Axial heterostructure - Transmission electron microscopy (TEM) image of an InAs nanowire of 40 nm diameter containing four InP barriers [from reference (9)].
Figure 1.5: Core-shell heterostructure. - a) Nanowire grown using reactant A. b) Switch form reactant A to reactant B, formation of a shell around the initial wire
Figure 2.6: Superlattice X-Ray spectra - a) Sets of h-scans (radial scans) near the in-plane GaN (30¯ h30) reflection, indexed in the Si hexagonal cell, taken at different steps of the AlN/GaN NW superlattice deposition
Figure 3.1: Cubic quantum box - Eigenvalues for a cubic potential box with l x = l y = l z
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