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Silicon Nanostructures for Photovoltaics

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Academic year: 2021

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Figure 14.1 Evolution of the maxima of LO 3 (left scale) and TO 3 (right scale) vibration modes for 3 nm SiO x /3 nm SiO 2 multilayers as a function of the annealing temperature, T A
Figure 14.2 HREM images of the 3 nm SiO x /3 nm SiO 2 multilayers for different annealing temperatures
Figure 14.3 (a) Scheme of the device of the I –V measurements; (b) I –V measurements under darkness, IR, and UV illuminations
Figure 14.4 Effect of the RF power density applied on the Si target ( P Si ) on the deposition rate (left axis), refractive index (right axis), and thickness (inset) of SiO x layer deposited during 3600 s.
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