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Theory of plasmonic properties of hyper-doped silicon nanostructures

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Academic year: 2021

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Figure 1: Example of three doped silicon nanostructures (j = 1, 2, or 3) of both arbitrary shape and intrinsic doping parameters N dopj
Figure 3: 2D map representation of the extinction efficiency for heavily doped cuboid Si-NS of size 100 × 100 × 50 nm 3 lying on a silica substrate
Figure 4: Simulation of the electric near–field behavior in the vicinity of doped (N dop = 2.66 × 10 21 cm −3 ) and intrinsic single Si-NS of same geometrical cross–section (100×100 ×50 nm 3 )
Figure 5: Sequence of optical near–field images describing the evolution of near–field patterns when passing from pure to doped silicon pads.
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