HAL Id: hal-01616518
https://hal.archives-ouvertes.fr/hal-01616518
Submitted on 13 Oct 2017
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Influence of an epitaxial Si capping of Ge islands on Si(0
0 1) and Si(1 1 0) by LPCVD
Philippe Ferrandis, L. Vescan, B. Holländer, V. Dashtizadeh, C. Dieker
To cite this version:
Philippe Ferrandis, L. Vescan, B. Holländer, V. Dashtizadeh, C. Dieker. Influence of an epitaxial Si capping of Ge islands on Si(0 0 1) and Si(1 1 0) by LPCVD. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2003, 17, pp.507-509. �10.1016/S1386-9477(02)00853-6�. �hal-01616518�