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Analytical model for RF power performance of deeply scaled CMOS devices

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Academic year: 2021

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Figure

Fig. 1: Circuit diagram of a reduced conduction angle RF power  amplifier.
Fig. 2 shows the waveforms for key voltages and  currents in the power amplifier when operated in the  maximum power condition for a certain bias point and load  resistance
Fig. 3: Modeled locus of drain efficiency versus output power.
Fig. 5 shows the modeled values for maximum output  power and the measured data, across all device widths

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