• Aucun résultat trouvé

Growth of Ag on Cu(001) studied by full-hemispherical X-ray photoelectron diffraction

N/A
N/A
Protected

Academic year: 2022

Partager "Growth of Ag on Cu(001) studied by full-hemispherical X-ray photoelectron diffraction"

Copied!
20
0
0

Texte intégral

(1)

Published in Surface Science 373, issues 2-3, 153-172, 1997

which should be used for any reference to this work 1

(2)

2

(3)

3

(4)

4

(5)

5

(6)

6

(7)

7

(8)

8

(9)

9

(10)

10

(11)

11

(12)

12

(13)

13

(14)

14

(15)

15

(16)

16

(17)

17

(18)

18

(19)

19

(20)

20

Références

Documents relatifs

The sum intensity on the 2D detector expressed as a function of the sample rotation angle represents the rocking curve for that reflection, with its reflection at the scattering angle

If the 3 nm MgO layer grown on GaAs presents a very high density of localized defects, the Fe Fermi level could be pinned by those defect states, so that the O2s position would

The crystallographic structure of the sample was refined from room temperature to liquid helium temperature in the centrosymmetric C2/c space group, i.e., a group which does not

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

For theannealed samples at 500°C, only NiSi monosilicide is detectedWhen the annealing temperature increases to 750°C the NiSi2disilicide is the main formed phase. The obtained

In this work, X-ray diffraction was involved to study the formation of crystalline nickel silicide phases.. For this purpose, Ni nanometric thin films were deposited on

This paper is focused on the evolution of the chemical analysis and the environment around silicon atoms in two powders as a function of annealing treatments under nitrogen

The image contrast is dominated by photoelectric absorption and scattering is negligible ; thus the resolution is only limited by the wavelength and the energy dose in the