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Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures

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Figure

FIG. 3. The PL transients showing the onsets (arrows) of the PL fatigue recorded at 0.82 eV at different (marked) excitation intensities
FIG. 5. Evolution of the rates of radiative recombination and Auger recom- recom-bination in SiGe nanoislands with a volume of 10 16 cm 3 .

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