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DISLOCATION-SOLUTE ATOM INTERACTION IN ALUMINUM STUDIED BY
AMPLITUDE-DEPENDENT INTERNAL FRICTION
T. Kosugi, T. Kino
To cite this version:
T. Kosugi, T. Kino. DISLOCATION-SOLUTE ATOM INTERACTION IN ALUMINUM STUDIED
BY AMPLITUDE-DEPENDENT INTERNAL FRICTION. Journal de Physique Colloques, 1985, 46
(C10), pp.C10-179-C10-182. �10.1051/jphyscol:19851041�. �jpa-00225425�
DISLOCATION-SOLUTE ATOM INTERACTION IN ALUMINUM STUDIED BY AMPLITUDE-DEPENDENT INTERNAL FRICTION
T. KOSUGI AND T.KIN0
Laboratory of Crystal Physics, Faculty of Science, Hiroshima University, Hiroshima, Japan
Abstract - In order to get the information on the force-distance curve for the interaction between a dislocation and a solute atom, amplitude-dependent inter- na1 friction was measured at 1.7 - 30 K on Al-100 at ppm Zn and Al-50 at ppm Zn single crystals. The temperature dependence of applied strain under a con- stant decrement is the same for two concentrations with high accuracy. The data were analyzed by the thermally assisted break-away model for dislocations assuming several potential forms. In conclusion, a modified Cottrell express- ion is proposed, in which dislocation core structure is taken into account, and the model can explain the temperature dependence of applied ~train~satis- factorily. The core radius of dislocation is estimated to be about 3 A.
1 - INTRODUCTION
Dislocations in crystals interact with various kind of particles, for example, point defects, electrons, phonons and so on, because of the structural disorder caused by them. The details of the interactions strongly reflect the structure of a disloca- tion.
The ultrasonic method proposed by Schwarz and Granatoll/ is a very useful one to get the information on the details of the interaction between a dislocation and a point defect. We used this method, i.e., the measurement of amplitude-dependent in- ternal friction due to dislocation break-away £rom pinning points at low temperatures, to get the force-distance curve for the interaction between a dislocation and a single solute atom.
II - EXPERIMENTAL
Specimens are Al-100 at ppm Zn and Al-50 at ppm Zn single crystals (3.5
X3.5 x 50 mm3 with [311] and [412] axes, respectively) made by a strain-annealing method, and an- nealed at 500°C for 3 h in air and slowly cooled in a furnace to room temperature be- fore the measurement. We selected these specimens from following reasons: the desired information will be obtained by introducing a single kind of solute atom with very low concentrations, especially zinc in Al is entirely dispersed on the dislocation lines as a single atom and further inertial effect/2/ or line tension effect/3/ may not occur because of low pinning concentrations. Amplitude-dependent interna1 fric- tion measurements were carried out by a composite oscillator method (51 kHz) at 1.7 -
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:19851041
CIO-180 JOURNAL DE PHYSIQUE
I :: / III - DISCUSSION
2
O.
O30 K. The accuracy of the measurement was better than 1 %. Details of the experi- mental procedure are similar to the previous work/4/.
Interna1 friction caused by dislocation break-away from pinning points is stress (or strain) amplitude dependent loss. Firstly we confirmed this point as shown in Fig. 1. The strain level at which the amplitude dependence started is larger for Al- 100 at ppm Zn than for Al-50 at ppm Zn, by a factor about 1.5. Here the background loss (amplitude independent loss) is explained as the interaction of acoustic wave with conduction electrons from the difference of the loss between two specimens. Thus we next measured the temperature dependence of applied strain under a constant inter- na1 friction in a region where the amplitude dependent loss is dominant (Fig. 2).
The influence on the value of
Efrom the change of background loss with.temperature was negligible, i.e., at most less than 2 % near 30 K for Al-50 at ppm Zn. The accu-
I . ,
racy and reproducibility of the measurement
10
.
W
Y
' 5 -
,--
-plitude required to produce a constant'dec- Fig. Applied de- rement was sh wn by Schwarz and Granato to pendence of internal friction at 4.2 K. follow the T2?31aw assuming the parabolic
..' ?
. . .
O./**'.*Fig. 2 Temperature dependence of applied strain under a constant internal friction.
The symbol + shows the values of
Efor Al-100 at ppm Zn divided by the ratio of
Efor Al-100 at ppm Zn to Al-50 at ppm Zn at 4.2 K.
- T = L.2 K -
0
AI-100otppmZn A I - 5 0 a t p p m Z n
. O . O - 0
In the case that dislocations are pinned by point defects along the dislocation segments is very high for each specimen, and further- more the temperature dependence of
Eis the same for two specimens with different con- centrations. This indicates the obtained curves precisely reflect the force-distance curve for the interaction between a disloca- tion and a single Zn solute atom.
O- '
0 D O O O o o. and the break-away starts from the pinning
lG7 106 IO' point at the center of maximum double loop
& in each segment, the stress (or strain) am-
Fig. 4 Temperature dependence of applied strain. Calculations £rom the Cottrell expression, its parabolic approximation and the modifie. Cottrell expression are compared with the experiment.
10
8
W -
"O
7
6
L 0 '.
-
- modjfied Cottrell
- ( F = O for x/r0sl.2)
-
-
-
0AI-100at ppm Zn -
I I l I 1
/.precise treatment by Granato and Lucke, the
0.8 - -
- -
-
: .
O 5 10 15 20 2 5 30
T ( K I
coefficient of T ~ is not strictly constant / ~ but depends on T/5/. We analyzed Our data using the formula (A-9) in their paper/5/
assuming the Cottrell expression/6/ and its parabolic approximation for the force-dis- tance curve (Fig. 3). We note here that the force-distance curve for the Cottrell ex- pression is very reasonable to assume, since the apparent form is the same as those for the modulus effect (the other elastic inter- action) and the electrj.ca1 interaction when
- Cottrell - the dislocation moves on the glide plane.
Fitting parameters are only two, i.e., EM
---.-.-- (E at T = O) and the binding energy, Uo and
Cotkrell - U1 (U1
=0.577 u0) for the Cottrell express- ion and its parabolic approximation, respect-
-