Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment

With this newly developed DLTS simulation technique, it is now possible to investigate in detail the impact of extended defects on the electrical properties of pn-junctions,

For high frequency applications requiring short gate lengths, it has been shown that the double heterostructure using a thick AlGaN back barrier with 8%

Keywords— high electron mobility transistors (HEMTs), GaN, Carbon doped, output power density and power added efficiency (PAE)..

Abstract— We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT

Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 μA/mm, a

Both samples show a decreasing V-pit density with increasing distance from the nucleation layer, but sample B consistently shows a much lower density than sample A in the upper

In addition to their outstanding RF performance in terms of high output power combined with high power added efficiency at 40 GHz, AlN/GaN HEMTs show good robustness

Specifically, we fabricated three tailored samples in order to analyze the contribution of the aluminum nitride (AlN) nucleation, the AlGaN buffer and the C-doped GaN layer (GaN:C)