• Aucun résultat trouvé

Chemical Interactions at the Al/Poly-Epoxy Interface Rationalized by DFT Calculations and a Comparative XPS Analysis

N/A
N/A
Protected

Academic year: 2021

Partager "Chemical Interactions at the Al/Poly-Epoxy Interface Rationalized by DFT Calculations and a Comparative XPS Analysis"

Copied!
19
0
0

Texte intégral

Loading

Figure

Figure 4. Optimized metal−organic structures representing inter action of the single Al atom with D and DwH dimer models
Table 1. Dissociation Energy (eV) of O−H Bond and Formation energy (eV) of the H 2 Molecule
Figure 5. Most stable geometries (fully optimized) of the Al n clusters adsorbed on D and DwH models at their N O h and O h sites, respectively.
Figure 8. Experimental C 1s spectrum (in black) for the Al/poly epoxy buried interface
+2

Références

Documents relatifs

K. ATOM-PROBE ANALYSIS OF G.P.. The layer-by-layer concentration profiles in the < l o o > direction were obtained from several G.P. Generally, the G.P. zones were

2 -Atom probe spectra of gallium arsenide recorded during field evaporation by electric pulsing under different conditions: without energy compensator (above); with compensator at

If the test is done just at the interface, desadhe- sion cracks are formed between Zirconia and Aluminium (Fig.8); we observe slips band in Aluminium which are not

Accordingly the erroneous composi- tion of GaAs and Gap observed by the A-P analysis is the result of the preferential field evaporation of unstabilized Ga atoms due to

Doi/3/ applied a Fourier analytical method to Toman's data and concluded that the zones are multi-layers and the zone center consists of 100% Cu and the adjacent layers only 50%

Compositional depth profile of degree of order, to Li atoms in the brightly imaged region the 6 ' phase at of the Al-11.5 at% Li alloy aged at room the initial staae

The A1-Nb interfaces formed at room temperature exhibited an atomically abrupt interface and no mixed layer was found.. The A1 atoms at the abrupt atomic interface

Fig.2 Field enission cut-rent f m a p-semiconductor for the surface covered with the high resitive layer, Al and field desorbed sur- face... On the bases of