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End of range defects in Ge

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Figure

FIG. 1. WBDF-XTEM images of a Ge layer 共 a 兲 after 150 keV Ge + 5
FIG. 4. Plot of ␧ zz the lattice strain normal to the wafer surface as measured by electron holography and of the concentration of excess Ge interstitials calculated by MC as a function of distance from the c/a interface

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