Post Processing Dispersion Trimming for On-Chip Mid-Infrared Supercontinuum Generation

As a flat profile of the dispersion is generally targeted for SC generation, both in the anomalous and in the normal dispersion regime, the possibility of controlling

Here, we demonstrate the generation of 1.4 octave spanning supercontinuum in the MWIR from 2.6 to 7.3μm with a useful on-chip average power greater than 7mW by pumping

To those ends, we pumped a germanium on silicon air-clad waveguide with ~200 fs pulses at 4.6 μm and generate a supercontinuum extending from 3.53 to 5.83 μm, with milliwatt-level

In this work, we report what we believe to be the first octave-spanning fully coherent supercontinuum in an ANDi waveguide on a silicon-based chip in the mid-infrared.. A SiGe

Indeed, simulations considering constant α FC predict SC generation up to 7 µm (fig. 1b, bottom, green curve), whereas simulations including the wavelength dependence of α FC

Recently, silicon-germanium (SiGe) alloys, have emerged as an attractive alternative platform for mid-IR photonics [9-11], with transparency potentially extending

The miniaturization of broadband octave-spanning sources (SCG) in the mid-IR has been already demonstrated on a chalcogenide chip [2]. Yet, these materials do not

Mid-Infrared Coherent Sources (OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS), 2020, Washington, United States... MF2C.5.pdf