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Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters

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Academic year: 2021

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Figure  1.  SEM  images  (bird’s  eye  on  the  left  and  top  view  on  the  right  side)  of  GaN  NW  samples grown at various substrates temperatures: (a) 770°C, (b) 790°C, (c) 810°C, and 825 °C
Figure 2. (a) Cross-section and (b) top-view SEM images of a sample containing GaN NWs  with a superlattice (SL) consisting of 88 periods of Al 0.1 Ga 0.9 N/AlN (S4)
Figure 4. Room-temperature CL measurements of NWs containing an 88-period AlGaN/AlN  quantum dot SL
Table 1. Nominal characteristics of the samples under study: AlN barrier thickness (t B ), GaN  dot height (t QD ), Al mole fraction in the dots (x)

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