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Influence of the growth and annealing atmosphere on the electrical conductivity of LTG crystals
Maroua Allani, N Batis, Thierry Laroche, A. Nehari, H Cabane, K. Lebbou, Jean Boy
To cite this version:
Maroua Allani, N Batis, Thierry Laroche, A. Nehari, H Cabane, et al.. Influence of the growth and annealing atmosphere on the electrical conductivity of LTG crystals. Optical Materials, Elsevier, 2017, 65, pp.99 -102. �10.1016/j.optmat.2016.09.072�. �hal-02392622�
HAL Id: hal-02392622
https://hal.archives-ouvertes.fr/hal-02392622
Submitted on 4 Dec 2019
HAL is a multi-disciplinary open access archive for the deposit and dissemination of sci- entific research documents, whether they are pub- lished or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers.
L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.
Influence of the growth and annealing atmosphere on the electrical conductivity of LTG crystals
Maroua Allani, N Batis, Thierry Laroche, A Nehari, H Cabane, K Lebbou, Jean Boy
To cite this version:
Maroua Allani, N Batis, Thierry Laroche, A Nehari, H Cabane, et al.. Influence of the growth and annealing atmosphere on the electrical conductivity of LTG crystals. Optical Materials, 2017, 65, pp.99 -102. �hal-02392622�
' - 1
Optical Materials xxx (2016) 1-4
Contents lists available at ScienceDirect
Optical Materials
jou mal ho me page: www.elsevier.com/1 ocate/o pt mat
Influence of the growth and annealing atmosphere on the electrical conductivity of LTG crystals
M. Alani a, b, N. Batis b, T. Laroche C, A. Nehari ct, H. Cabane e, K. Lebbou d, *,
J.J.
Boy a• FEMTO-ST lnslitute. UFC, CNRS. ENSMM. lJTBM. 25000 Besançon. France b JNSAT, BP 676, 1080 Tunis Cedex, Tunisia
c Freqlnlsys, TEMIS /nnovalion, 25000 Besançon. France
d Institut Lumière Matière, UMR5306 UniversitéLyon 1-CNRS, Université de Lyon, Lyon 69622, Villeurbanne Cedex. France
• Cristal /nnov - Université Lyanl. 73800. Sainte-Hélène du Lac, France
A R T I C L E I N F O A B S T R A C T Article history:
Received 19 May 2016 Received in revised form 28 September 2016 Accepted 28 September 2016 Available online xxx Keywords:
We present the electrical conductivity measurements of La3Ga5,s Tao,s014 (LGT) crystals grown by Czo- chralski (Cz) technique in Ir crucibles and N2 atmosphere containing few percent of 02. ln addition, we have studied the effect of thermal annealing on the stability and the thermal conductivity. The electrical conductivity depends on the stoichiometry, the inhomogeneous impurities levels, the growth atmo- sphere and the post-growth annealing conditions. Furthermore, we recorded the UV-Vis transmission spectra of the LGT samples and we note that the less resistive LGT samples have an edge of the intrinsic absorption at the highest wavelengths.
Langasite family Defects
Electrical conductivity Czochralski method
1. Introduction
Owing to its high acoustic quality, its high piezoelectric co- efficients and thermal stability, La3Ga55 Ta0.s014 (LGT) Langatate is a promising piezoelectric crystal for acoustic devices developed in the time and frequency domain and particularly for ultra-stable resonators (Bulk Acoustic Waves resonators) and high tempera- ture wireless sensors. However, these applications requir ho- mogenous material with reproducible and performed properties.
In ac . during the growth b Czochralski process and post- growth heat treatment defects are created in LGT crystal, which limits its potential use. Poin defects, arising of the growth and post-growth conditions, can react as ionic and electronic charge carriers and generate conductive tosses particularly at high temperatures.
The presence of point defects significantly affects the physical and chemical properties. They can be revealed by chemical. optical and/or electrical analytical methods. In this paper, we present the characterization of the point defects and the electrical resistivity measurement of LGT crystals.
• Corresponding author.
E-mail address: kheirreddine.lebbou@univ-lyonl.fr (K. Lebbou).
hllp://dx.doi.org/ 10.101 G/j.optmat.201 G.09.072 0925-3467/
2. Experimental 2.1. The samples
As presented previously [1.2], we have selected different LGT in- gots grown under different conditions. For comparison, we selected LGS sample as standard. Details of the growth conditions, thermal annealing treatment and color are indicated in Table 1 which con- cerns 3 different sources: Cl (France), CK (USA) and FO (Russia).
2.2. Chemical analysis of LGT crystals
2.2.1. Electron Probe Micro-Analysis EPMA: major contents analysis We have analyzed LGT samples by Electron Probe Micro- Analysis (EPMA) and we determined their atomic compositions.
This microanalysis is performed on small polished samples (a few hundred square microns) having a thickness of about fifty microns.
They are then bonded on resin or metal support. Each measure- ment corresponds to the average of a few tens of scans.
2.2.2. Femtosecond laser ablation !CP-MS (analysis of traces and ultra-traces of impurities)
Ail measurements were carried out on a DRC2 quadrupole ICPMS (Perkin Elmer) instrument coupled to an Alfamet
Please cite this article in press as: M. Alani, et al., Influence of the growth and annealing atmosphere on the electrical conductivity of LTG crystals, Optical Materials (2016), http://dx.doi.org/10.1016/j.optmat.2016.09.072
