• Aucun résultat trouvé

Model Calculation of the Static Magnetic Susceptibility in Rare Earth Semiconducting Compounds

N/A
N/A
Protected

Academic year: 2021

Partager "Model Calculation of the Static Magnetic Susceptibility in Rare Earth Semiconducting Compounds"

Copied!
13
0
0

Texte intégral

Références

Documents relatifs

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

In the dilute alloys studied exchange interactions are small perturbations on the crystal field and the exchange can be adequately treated in the molecular

If the f level is pushed above the Fermi level E, (it only need move a small fraction of a volt to do this), we have a local valence transition, where an electron

- We investigate the temperature and magnetic field dependence of the ultrasonic attenuation in rare earth alloys and compounds with crystalline field split

However, exploiting the EELS spectra (in contrast to the more commonly used core level XPS spectra with photoelectrons having an energy equivalent with BIS / 1 7 / )

The tunnelling-state-lattice relaxation time increases by a factor 6 as the magnetic field increases from 0 to 60 kOe.. In

- We present a method for calculating f-electron photoemission spectra of light rare-earth insulating systems within the filled band Anderson impurity model and