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Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog

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Academic year: 2021

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FIG. 1. Schematics of (a) the classic double-cantilever beam experiment and (b) its nanoscale equivalent
FIG. 2. HAADF-STEM micrographs of the two types of samples after removal of one of the substrates: (a) 450 nm of InP bonded on Si using 200 nm of SiO 2 and (b) 150 nm of Si bonded to Si using 150 nm of SiO 2
FIG. 5. (a) AFM image showing a sample indent on an InPOI sample. The distinctive triangular shape of the Berkovich tip is seen at the center
TABLE I. Summary of the nano-DCB measurements on the InPOI samples.
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