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Transport and interaction blockade of cold bosonic atoms in a triple-well potential

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Transport and interaction blockade of cold bosonic

atoms in a triple-well potential

Peter Schlagheck

, Francesc Malet, Jonas C. Cremon, and Stephanie M. Reimann

Division of Mathematical Physics, LTH, Lund University, Sweden

D´epartement de Physique, Universit´e de Li`ege, Belgium

We investigate the transport properties of cold bosonic atoms in a triple-well potential that consists of two large outer wells, which act as microscopic source and drain reservoirs, and a small inner well, which represents a quantum-dot-like scat-tering region. Bias and gate “voltages” are introduced in order, respectively, to tilt the triple-well configuration and to shift the energetic level of the inner well with respect to the outer ones. By means of exact diagonalization consider-ing a total number of 6 atoms in the triple-well potential, we find diamond-like structures for the occurrence of single-atom transport in the parameter space spanned by the bias and gate voltages, in close analogy with the Coulomb blockade in electronic quantum dots.

Motivation

Interaction blockade experiments in double-well superlattices created by two optical lattices with the wavelengths

λ1 = 1530 nm and λ2 = 0.5λ1 = 765 nm

S. F¨olling et al., Nature 448, 1029 (2007) P. Cheinet et al., PRL 101, 090404 (2008)

Triple-well lattice

−→ add a third lattice with wavelength λ3 = 0.5λ2

Effective potential (for k ≡ 4π/λ1):

V (x) = V0[− cos(kx) + cos(2kx) − cos(4kx)]

−Vg cos(kx) − Vb sin(kx) Vb = Vg = 0 source drain quantum dot finite Vb and Vg

Vb tilts the triple-well potentials: −→ “bias voltage”

Vg pulls down the central well: −→ “gate voltage”

−→ analogy with Coulomb blockade for electrons:

load the lattice at given gate voltage Vg and vanishing bias with a well-defined number of particles per triple-well site,

ramp up the bias voltage until a given final value Vb,

measure the populations in the left, central, and right wells.

Specifically we consider

87Rb atoms

main periodicity 2π/k = λ2 = 765 nm

main lattice strength V0 = 20~2k2/m

effective 1D interaction strength g = 4~2k/m

Ground-state populations

Exact numerical diagonalization (based on the Lanczos algo-rithm) of the many-body Hamiltonian

ˆ H = Z dx ˆψ†(x) − ~ 2 2m2 ∂x2 + V (x) ! ˆ ψ(x) +g 2 Z dx ˆψ†(x) ˆψ†(x) ˆψ(x) ˆψ(x)assuming 6 atoms per triple-well site and

neglecting hopping between adjacent triple-well sites

(→ periodic boundary conditions in x: −π ≤ kx ≤ π).

0 2 4 6 -1 -0.5 0 0.5 1 0 2 4 6 Vg = 0.25V0 Vg = 0.5V0 Vb/V0 left well right well central well p op u la ti on

Single-atom transport

prepare the lattice with 6 atoms per triple-well site,

make the time-dependent ramping Vb(t) = st,

decompose the time-dependent many-body wavefunction within the instantaneous eigenbasis.

Numerical calculation for Vg = 0.25V0 and s = 0.002~3k4/m2:

-0.3 -0.2 -0.1 0 0.1 0.2 0.3 -170 -160 -150 3:0:3 2:0:4 2:1:3 en er gy [ ~ 2 k 2 /m ] Vb/V0

Landau-Zener probability for nonadiabatic transitions at avoided crossings:

P = exp[−2π∆E2/(~s)] −→ choose the ramping speed such that it is

too fast for the unwanted anticrossings

NL:NC:NR ↔ NL ± 1:NC:NR1

with energy scale δE ∼ 0.001~2k2/m for NC = 0,but slow enough for the “good” anticrossings

NL:NC:NR ↔ NL ± 1:NC1:NR or NL:NC ± 1:NR1 with energy scale ∆E ∼ 10 × δE:

δE2 ≪ ~s < ∆E2

Atomic “Coulomb” diamonds

Plotted are the bias voltages Vb at which a single-atom trans-fer takes place between adjacent wells. The size of the circles marks the extent of the corresponding avoided crossings.

3:1:2

3:0:3

2:1:3

2:2:2

2:1:3 2:0:4 1:2:3 2:1:3 1:3:2 Vg/V0 V b /V 0 -0.2 -0.4 0 0 0.2 0.2 0.4 0.4 0.6 0.8 1 1.2

Bose-Hubbard model

Consider a simplified Bose-Hubbard model for the system

with the on-site energies EL/R = E0 ± Vb and EC = E1 − Vb, with the local interaction energies EU(L/R/C) = EU0.27V0, and with negligible tunnel coupling between adjacent wells.

Local particle-addition energies:

µ+L/R = E0 ± Vb + NL/REU and µ+C = E1 − Vb + NCEU −→ avoided crossings of NL:NC:NR ↔ NL ± 1:NC ∓ 1:NR: Vb = E1 − E0 − Vg + (NC − NL1)EU −→ avoided crossings of NL:NC:NR ↔ NL:NC ± 1:NR1: −Vb = E1 − E0 − Vg + (NC − NR ± 1)EU -4 -2 0 2 4 6 -2 0 2

3:0:3

2:1:3

2:2:2

1:3:2

1:4:1

0:5:1

0:6:0

V b /E U (Vg − E1 + E0)/EU EU

Main differences to Coulomb diamonds in quantum dots:

open ends for empty dot and empty reservoirs

asymmetry between balanced (NL = NR) and unbalanced (NL = NR ± 1) populations in the reservoirs

−→ microscopic nature of the reservoirs

Perspectives

extract local interaction energy EU from the distance

be-tween the diamond structures

single-atom pumping (3:0:3 → 2:0:4) following a closed curve in Vg − Vb space

atomic transistors

P. Schlagheck, F. Malet, J. C. Cremon, and S. M. Reimann, New J. Phys., in press (arXiv:0912.0484)

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