• Aucun résultat trouvé

KxNa1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

N/A
N/A
Protected

Academic year: 2021

Partager "KxNa1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices"

Copied!
21
0
0

Texte intégral

Loading

Figure

Fig. 1 Layout, dimensions and picture of the CPW devices
Figure  2 displays the regular morphology of the thin films. The homogeneous shape of the  grains and their arrangement suggest a preferred orientation
Fig. 2  SEM images of the surface morphology  and cross-sections  (in inset)  of (a) KNN50/50 and  (b) KNN70/30 thin films
Fig. 3  Θ - 2Θ  X-ray diffraction patterns displayed with a logarithmic intensity scale of (a) KNN50/50  thin film, (b) KNN70/30 thin film (c) K 0.5 Na 0.5 NbO 3  powder retrieved from the database JCPDS file
+5

Références

Documents relatifs

Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates.. 2012

Static and Dynamic Magnetic Properties of Single-Crystalline Yttrium Iron Garnet Films Epitaxially Grown on Three Garnet Substrates. Stress-induced perpendicular magnetization

The key finding of this first prospective, observational 10-year follow-up study including community-dwelling patients visiting their GP for a respiratory infection is that

(It must be emphasized that such differences in the formant patterns do not affect the vowel identity itself.) Conversely, there are examples of vocalizations within one speaker

Polycrystalline zinc oxide (ZnO) thin films have been deposited at 450˚C onto glass and silicon substrates by pulsed laser deposition technique (PLD).. The effects of glass

Abstract : Undoped and Co-doped ZnO (CZO) polycrystalline thin films (Co: 3, 5 at.%) have been deposited at 450ºC onto glass substrates using pulsed laser deposition method..

X-ray diffraction patterns showed that the Co- doped ZnO films crystallize in a hexagonal wurtzite type structure with a strong (002) orientation, and the grain sizes calculated

Finally, at microwave frequencies, domain wall motion (vibration and pinning/unpinning) still contributes to the material’s dielectric properties. Despite being highly tunable,