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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

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Academic year: 2021

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Figure

Fig. 1. Cross section of a pixel using the pinned photodiode (4T Pixel CIS).
Fig. 2. Cross section of a pixel using a conventional photodiode (3T pixel CIS).
Fig. 5. Mean-variance curves before and after TeV/g deposited dose using 0.8 MeV neutrons.
Fig. 7. Dark current distribution after irradiation for each IC imager tested. A common exponential behavior appears on the distributions.
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