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Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

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FIG. 1. Plan-view (a) and cross-sectional (b) STM images of (In,Ga)As/GaP QDs with a low In content
TABLE I. First four hole states and energies in a GaAs/GaP QD. The reference of energies is the valence band maximum of bulk GaP
TABLE II. Electron eigenstates and energies in a GaAs/GaP QD. The table describes the two lower energy states (at 2.248 and 2.262 eV), excited states in the [2.268–2.306] eV range, and the first electron state confined in the QD (at 2.310 eV)
TABLE III. Decomposition of the electron confined states on the bulk states. Energy (eV) X X X Y X Z L  E1 Xz 2.248 0.00000 0.00000 0.95125 0.00001 0.00021 E2 Xz 2.262 0.00000 0.00000 0.98899 0.00001 0.00031 E3 Xz 2.267 0.00000 0.00000 0.94798 0.00001 0.00
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