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Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

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Academic year: 2021

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Figure

Fig. 1. Architecture overview of the studied CMOS Image Sensor (CIS) Inte- Inte-grated Circuit (IC)
Fig. 2. Illustration of the TID induced degradation mechanisms in Pinned Photodiodes (PPD) and conventional photodiode (referred to as 3T here) at moderate (2-20 kGy) and high TID ( kGy)
Fig. 3. Cross sectional views of the studied photodiode layouts.
Fig. 6. External Quantum Efficiency (EQE) of the studied pixels before irradi- irradi-ation
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