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The photorefractive effect at large modulation depth in semiconductors with multiple defect levels

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FIGURE 1 Schematic energy-band diagram with conduction-band edge E c , valence-band edge E v , defect-level  positions E tA  and E tB , electron-recombination rates r nt , r ptA , ,r ntB , r ptB  and r AB and optical generation rates g nA , g pA,
TABLE 1 Parameters used in the numerical applications, describing the InP semiconductor, as well as the  defect levels A and B
FIGURE 3 Normalized Fourier components for system AB and system A
FIGURE 4 a Illumination pattern and occupied level concentration n sA  for level A, when concentration of level  B is zero; n t AO is the bulk thermal equilibrium concentration, b Occupied level concentrations for levels A and B  in system AB
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