GaP/Si Antiphase domains annihilation at the early stages of growth

HAL Id: hal-02497252

https://hal.archives-ouvertes.fr/hal-02497252

Submitted on 3 Mar 2020

HAL is a multi-disciplinary open access

archive for the deposit and dissemination of

sci-entific research documents, whether they are

pub-lished or not. The documents may come from

teaching and research institutions in France or

abroad, or from public or private research centers.

L’archive ouverte pluridisciplinaire HAL, est

destinée au dépôt et à la diffusion de documents

scientifiques de niveau recherche, publiés ou non,

émanant des établissements d’enseignement et de

recherche français ou étrangers, des laboratoires

publics ou privés.

GaP/Si Antiphase domains annihilation at the early

stages of growth

Rozenn Bernard, Yanping Wang, Mounib Bahri, Thanh Tra Nguyen, Ronan

Tremblay, Tony Rohel, Karine Tavernier, Antoine Létoublon, Simon

Charbonnier, Pascal Turban, et al.

To cite this version:

Rozenn Bernard, Yanping Wang, Mounib Bahri, Thanh Tra Nguyen, Ronan Tremblay, et al.. GaP/Si

Antiphase domains annihilation at the early stages of growth. Summer School of the French Epitaxy

Network, Sep 2015, Porquerolles, France. �hal-02497252�

GaP/Si Antiphase domains annihilation at the early

stages of growth

Introduction

Conclusions & Perspectives

This work is supported by the French National Research Agency projects MENHIR, OPTOSI and ANTIPODE.

UHVCVD-MBE growth cluster for III-V-Si integration

Prépa UV/O3

Si GaAs InP GaSb InSb

HgCdTe

GaP/Si:∆a/a = 0.4%

BUT defects at the interface APB

Roughness • Bistepped silicon surface (Si (001) 6° off) • III / V growth conditions Dark field TEM

Micro twins (MT)

Antiphase domains (APD)

• Clean and flat interface (free if contaminants) • Control of the first monolayer of GaP

10ML of GaP (MEE) + GaP (MBE)

GaP/Si interface : MT generation, and abruptness

• MTs and abruptness of GaP/Si interface : sensitive to chemical preparation and improved by the use of a bistepped Si buffer . BUT antiphase boundaries are still observable.

• High V/III flux ratio tends to favor APD annihilation at the early stages of growth.

Perspectives : Detailed study of the influence of the growth parameters is required to understand these observations (ANR Antipode).

V/III = 5.5

GaP (200 nm)/Si (4° off)

Roughness induced by APDs

Influence of APB propagation and V/III flux ratio

High V/III flux ratio seems to favor the annihilation of APD. Obtention of monodomains of GaP. STM-BEEM image, 400*400 nm2

Influence of Si chemical

preparation on MT generation Influence of growth conditions on MTs

10 nm GaP/Si (001) 100*100 nm² Early annihilation of antiphase domains , ,b) 4 , J. Stodolna 3 , P. Turban 3 , S. Charbonnier 1 , A. Létoublon 1 R. Bernard , 1 , K. Tavernier 1 , T. Rohel 1 , R. Tremblay ,a) 1 , T. Nguyen Thanh 2 , M. Bahri 1 Y. Ping Wang

A. Ponchet4_{, L. Largeau}2_{, G. Patriarche}2_{, N. Bertru}1_{, A. Le Corre}1_{, C. Cornet}1_{, O. Durand}1

1- UMR FOTON, CNRS, INSA Rennes, F35708, Rennes, France.

2- Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route Nozay, 91460 Marcoussis, France.

3- Institut de Physique de Rennes, UMR 6251, CNRS-Université de Rennes 1, Campus de Beaulieu, Bât 11E, 35042 Rennes Cedex, France. 4- CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP94347 Toulouse cedex 04, France.

a)- Current address: European Synchrotron Radiation Facility, B.P. 220, F-38043 Grenoble Cedex, France.

b)- Current address: EDF R&D, Département Matériaux et Mécanique des Composants, avenue des renardières – Ecuelles, F-77250 Moret sur Loing, France.

• Pseudomorphic growth

without misfit dislocation

Solutions

III / V on Si

Modified RCA treatment

Si epi // Si Si epi // Si UV/O3treatment RHEED (×n) splitting [1-10]

Influence of the Si chemical preparation and of the use of a bistepped Si buffer on the abruptness

of the GaP/Si interface

III / V on Si III / V on Si UV/O3 treatment Modified RCA treatment III / V on Si-épi // Si UV/O3 treatment 10 nm GaP/Si (001)-6°-off 100*100 nm² S T M i m a g e , 4 0 0 *4 0 0 n m ²

Y. Ping Wang et al., Appl. Phys. Lett., submitted (2015).

35 nm GaP/Si

(001)-6°-off

APD propagation across the layer

III / V on Si without Si buffer

1 ML Ga coverage

0,7 ML Ga coverage Homoepitaxy of bistepped silicon

buffer on Si (001) 6° off STEM-HAADF images Vicinality of the Si substrate influences GaP growth 100*100 nm² S T M i m a g e , 4 0 0 *4 0 0 n m ² S T M -B E E M i m a g e s

GaP (200 nm)/Si (6° off)

Two types of antiphase domains : one domain is covered by the other

One single domain

S T E M -B F im a g e s V/III = 11