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Resonant Raman scattering in GaAsN: Mixing, localization and band impurity formation of electronic states

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Academic year: 2021

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Figure

Figure 1 shows transmission electron microscopy
FIG. 2: Resonant Raman spectra from the 1 µm thick GaAs 1−x N x layer for excitation at 1.83 eV (A), 1.91 eV (B)
Figure 3 shows low-frequency Raman spectra mea- mea-sured from the three GaAsN/GaAs multiple quantum well structures
FIG. 4: In-plane electron density distribution used for the calculations of the resonant Raman spectra

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