Resistivity percolation of co-sputtered amorphous Si/Ti films

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Microfabrication process steps have been developed in clean room environment and using standard microelectronic technology so as to realize compatible Above IC thin film

Email: i.a.figueroa@sheffield.ac.uk (I.A. The scavenging effects of the Y and Si, in particular the possibility of Y reducing the oxides, could be responsible for

Jalal-Eddin.Al-Tamimi@univ-lyon2.fr--http://www.ddl.ish-lyon.cnrs.fr/ Identifier les indicesstatiquesetdynamiquesentrant en jeu dans la caractérisation des systèmes vocaliques

Although the films remain X-ray amorphous at annealing temperatures as high as 950°C, FTIR and Raman spectroscopy indicate that TiO 2 crystallizes in anatase structure

These factors cause ties of transition metals amorphous alloys resistance to rise with temperature, All (metal glasses) suggested that in the low the mentioned mechanisms, both

We propose a simplified model for the deposition kinetics of GD a-Si:H as well as a-Si:F:H films taking into account a dissociation energy of a chemical bond of diatomic

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