• Aucun résultat trouvé

Relative intensity noise of silicon-based quantum dot lasers

N/A
N/A
Protected

Academic year: 2021

Partager "Relative intensity noise of silicon-based quantum dot lasers"

Copied!
3
0
0

Texte intégral

Loading

Figure

Fig. 1. (a) Epi-structure of the p-doped silicon-based InAs/GaAs QD laser. (b) Light-current characteristics of undoped (blue) and p-doped (red)  QD lasers at room temperature

Références

Documents relatifs

Using a lattice- based signature in message-recovery mode is quite generic (i.e it does not depend on the structure of the message), and so it may be used in AKE constructions that

A fortes concentrations d'Al3+, l'amplitude totale de la fluorescence a été grandement diminuée et le déclin contenait seulement une phase lente (Fig. Également,

This controller uses a cascaded PI and PID computation as well as fluidic drive cylinders to control the curvature of the soft and highly compliant arm segments, allowing for

The radial dif- fusion model also predicts a decay of fluxes right after the main phase of the storm, contrary to High Energy Electron Fluxmeter (HEEF) measurements on CRRES

It shows the locus of the ESR observations near 75 ◦ N, the equatorward edge of the red-line emission observed by the MSP, the cross-trajectory horizontal flows measured by the F13

Für Kinder ohne Sprachentwicklungsstörung ist eine eindeutige Schlussfolgerung nicht mög- lich – zwar finden sich in der SU-Gruppe einzelne Probanden, die sehr schwache Ergebnisse

The dotted theoretical curve is shifted downwards to fit the observations at x = 92.5° where the excess of radiance becomes small compared to the air Rayleigh

Musics of the new times: Romanian manele and Armenian rabiz as icons of post-communist changes.. Biliarsky Ivan,