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STUDY OF IN-PLANE SILICON NANOWIRES OBTAINED VIA A SOLID-LIQUID-SOLID GROWTH PROCESS AND THEIR SELF- ORGANIZATION FOR ELECTRONIC APPLICATIONS

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Figure

Figure  1.31  Principle  of  laser  interferometry  based  on  monitoring  periodic  constructive  and  destructive interference of the reflected laser light
Figure  2.2  SEM  images  showing  the  microstructures  of  indium  thin  films  evaporated  on  Si  wafer  with native oxide: (a-c) SEM images of In thin film with nominal thickness of ~5 nm, tilt angle of 75°  in (c); (d-f) SEM images of In thin film wi
Figure 2.11 Fitting of the imaginary part of the pseudo-dielectric function ε i  measured by
Figure 2.12 In NPs diffusing and coalescing on Al-doped ZnO (AZO) substrate.
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